| Model | AC3M0025075Ki | Description | SiC MOS (Silicon Carbide)AC3M0025075Ki 750V 80A | | FET Type | N-Channel | Series | Silicon Carbide | | DrainVoltage(Vdss) | 750V | Current | 80A | | Drive Voltage | 15V | Vgs (Max) | -8V, +19V | | Rds On | 25mΩ | Vgs(th) | 3.8V | | Gate Charge (Qg) | 119 nC | Input Capacitance (Ciss) | 3055 pF | | Power Dissipation | 262W | Operating Temperature | -40°C ~ 175°C | | Mounting Type | Through Hole | Package | TO-247-4L |
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