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AC3M0025065D

 
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Model AC3M0025065D Description SiC MOS (Silicon Carbide)AC3M0025065D 650V 97A
FET Type N-Channel Series Silicon Carbide
DrainVoltage(Vdss) 650V Current 97A
Drive Voltage 15V Vgs (Max) +19V, -8V
Rds On 25mΩ Vgs(th) 3.6V
Gate Charge (Qg) 108 nC Input Capacitance (Ciss) 2980 pF
Power Dissipation 326W Operating Temperature -40°C ~ 175°C
Mounting Type Through Hole Package TO-247-3
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+86-755-83-666-558
E-mail: apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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