| Model | AC3M0025065D | Description | SiC MOS (Silicon Carbide)AC3M0025065D 650V 97A | | FET Type | N-Channel | Series | Silicon Carbide | | DrainVoltage(Vdss) | 650V | Current | 97A | | Drive Voltage | 15V | Vgs (Max) | +19V, -8V | | Rds On | 25mΩ | Vgs(th) | 3.6V | | Gate Charge (Qg) | 108 nC | Input Capacitance (Ciss) | 2980 pF | | Power Dissipation | 326W | Operating Temperature | -40°C ~ 175°C | | Mounting Type | Through Hole | Package | TO-247-3 |
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