| Model | AC3M0021120K | Description | SiC MOS (Silicon Carbide)AC3M0021120K 1200V 100A | | FET Type | N-Channel | Series | Silicon Carbide | | DrainVoltage(Vdss) | 1200V | Current | 100A | | Drive Voltage | 15V | Vgs (Max) | +15V, -4V | | Rds On | 21mΩ | Vgs(th) | 3.6V | | Gate Charge (Qg) | 162 nC | Input Capacitance (Ciss) | 4818 pF | | Power Dissipation | 469W | Operating Temperature | -40°C ~ 175°C | | Mounting Type | Through Hole | Package | TO-247-4L |
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