Products
Collection

AC3M0021120K

 
Collection:0
Detail
Applications
Download
Replace
Model AC3M0021120K Description SiC MOS (Silicon Carbide)AC3M0021120K 1200V 100A
FET Type N-Channel Series Silicon Carbide
DrainVoltage(Vdss) 1200V Current 100A
Drive Voltage 15V Vgs (Max) +15V, -4V
Rds On 21mΩ Vgs(th) 3.6V
Gate Charge (Qg) 162 nC Input Capacitance (Ciss) 4818 pF
Power Dissipation 469W Operating Temperature -40°C ~ 175°C
Mounting Type Through Hole Package TO-247-4L
ADDRESS: 17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL:
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail: apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

APSEMI
COMPANY PROFILE
COMPANY CULTURE
HISTORY
INFORMATION
SUPPORT

PRODUCTS
PHOTO DMOSRELAY
SiC MOSFET SiC SCHOTTKY DOIDES SiC PHOTO DMOSRELAY (GaAs/InSb) HALL ELEMENT OPTOCOUPLER
GaAs HALL ELEMENTS
InSb HALL ELEMENTS
MAGNETORESISTIVE ELEMENTS
SWITCH HALL IC
LINEAR HALL IC
INTEGRATED CURRENT SENSOR
APPLICATIONS
SMART INDUSTRY SMART TRANSPORTATION SMART HOME SMART ENERGY SMART CUSTOMIZATION DESIGN RESOURCES