| Model | AC2M0080120D | Description | SiC MOS (Silicon Carbide)AC2M0080120D 1200V 36A | | FET Type | N-Channel | Series | Silicon Carbide | | DrainVoltage(Vdss) | 1200V | Current | 36A | | Drive Voltage | 20V | Vgs (Max) | +25V, -10V | | Rds On | 80mΩ | Vgs(th) | 4V | | Gate Charge (Qg) | 62 nC | Input Capacitance (Ciss) | 950 pF | | Power Dissipation | 192W | Operating Temperature | -55°C ~ 150°C | | Mounting Type | Through Hole | Package | TO-247-3 |
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