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AC2M0080120D

 
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Model AC2M0080120D Description SiC MOS (Silicon Carbide)AC2M0080120D 1200V 36A
FET Type N-Channel Series Silicon Carbide
DrainVoltage(Vdss) 1200V Current 36A
Drive Voltage 20V Vgs (Max) +25V, -10V
Rds On 80mΩ Vgs(th) 4V
Gate Charge (Qg) 62 nC Input Capacitance (Ciss) 950 pF
Power Dissipation 192W Operating Temperature -55°C ~ 150°C
Mounting Type Through Hole Package TO-247-3
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E-mail: apsemi@a-semi.com
sales@a-semi.com
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