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AC2M0025120D

 
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Model AC2M0025120D Description SiC MOS (Silicon Carbide)AC2M0025120D 1200V 90A
FET Type N-Channel Series Silicon Carbide
DrainVoltage(Vdss) 1200V Current 90A
Drive Voltage 20V Vgs (Max) +25V, -10V
Rds On 25mΩ Vgs(th) 2.4V
Gate Charge (Qg) 161 nC Input Capacitance (Ciss) 2788 pF
Power Dissipation 463W Operating Temperature -55°C ~ 150°C
Mounting Type Through Hole Package TO-247-3
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